Infineon CoolMOS C7 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- N° de stock RS:
- 214-9070
- Référence fabricant:
- IPL60R104C7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
27,01 €
(TVA exclue)
32,68 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 1 965 unité(s) expédiée(s) à partir du 06 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 5,402 € | 27,01 € |
| 10 - 20 | 4,862 € | 24,31 € |
| 25 - 45 | 4,536 € | 22,68 € |
| 50 - 120 | 4,266 € | 21,33 € |
| 125 + | 3,942 € | 19,71 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9070
- Référence fabricant:
- IPL60R104C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 104mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 122W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Standards/Approvals | No | |
| Width | 8.1 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 104mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 122W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Standards/Approvals No | ||
Width 8.1 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are suitable for hard and soft switching functions. It comes with increased power density solutions due to smaller packages. It Incorporates optimized PCB assembly and layout solutions.
Suitable for hard and soft switching
SMD package with very low parasitic inductance for easy device control
Liens connexes
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R104C7AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 650 V, 5-Pin ThinkPAK 8 x 8 IPL65R130C7AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R210P6AUMA1
- Infineon CoolMOS™ CFD7 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R160CFD7AUMA1
- Infineon CoolMOS™ P6 N-Channel MOSFET 600 V, 5-Pin ThinkPAK 8 x 8 IPL60R180P6AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 5-Pin ThinPAK 8 x 8 IPL60R065C7AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 5-Pin ThinPAK 8 x 8 IPL60R125C7AUMA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 600 V, 3-Pin D2PAK IPB60R099C7ATMA1