Infineon CoolMOS C7 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- N° de stock RS:
- 214-9070
- Référence fabricant:
- IPL60R104C7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
21,48 €
(TVA exclue)
25,99 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 965 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 4,296 € | 21,48 € |
| 10 - 20 | 3,866 € | 19,33 € |
| 25 - 45 | 3,61 € | 18,05 € |
| 50 - 120 | 3,394 € | 16,97 € |
| 125 + | 3,136 € | 15,68 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9070
- Référence fabricant:
- IPL60R104C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | VSON | |
| Series | CoolMOS C7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 104mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 122W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Width | 8.1 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type VSON | ||
Series CoolMOS C7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 104mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 122W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Width 8.1 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are suitable for hard and soft switching functions. It comes with increased power density solutions due to smaller packages. It Incorporates optimized PCB assembly and layout solutions.
Suitable for hard and soft switching
SMD package with very low parasitic inductance for easy device control
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