Infineon CoolMOS C7 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON IPL65R130C7AUMA1
- N° de stock RS:
- 214-9079
- Référence fabricant:
- IPL65R130C7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
20,39 €
(TVA exclue)
24,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 22 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 4,078 € | 20,39 € |
| 10 - 20 | 3,632 € | 18,16 € |
| 25 - 45 | 3,386 € | 16,93 € |
| 50 - 120 | 3,142 € | 15,71 € |
| 125 + | 2,896 € | 14,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9079
- Référence fabricant:
- IPL65R130C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 102W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 0.8V | |
| Width | 8.1 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 102W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 0.8V | ||
Width 8.1 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Liens connexes
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin PG-VSON-4
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 4-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin PG-VSON-4 IPL65R230C7AUMA1
- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON