Infineon CoolMOS C7 N-Channel MOSFET, 15 A, 650 V Enhancement, 5-Pin VSON IPL65R130C7AUMA1
- N° de stock RS:
- 214-9079
- Référence fabricant:
- IPL65R130C7AUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
25,40 €
(TVA exclue)
30,75 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 100 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 5,08 € | 25,40 € |
| 10 - 20 | 4,522 € | 22,61 € |
| 25 - 45 | 4,22 € | 21,10 € |
| 50 - 120 | 3,91 € | 19,55 € |
| 125 + | 3,608 € | 18,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9079
- Référence fabricant:
- IPL65R130C7AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 800mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Power Dissipation Pd | 102W | |
| Minimum Operating Temperature | -40°C | |
| Width | 8.1mm | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 800mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Power Dissipation Pd 102W | ||
Minimum Operating Temperature -40°C | ||
Width 8.1mm | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Easy to use/drive due to driver source pin for better control of the gate
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
Liens connexes
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