ROHM R6013VND3 NaN Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 265-5414
- Référence fabricant:
- R6013VND3TL1
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 bobine de 2500 unités)*
2 337,50 €
(TVA exclue)
2 827,50 €
(TVA incluse)
Ajouter 2500 unités pour bénéficier d'une livraison gratuite
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,935 € | 2 337,50 € |
| 5000 + | 0,917 € | 2 292,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 265-5414
- Référence fabricant:
- R6013VND3TL1
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | R6013VND3 NaN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.3Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Power Dissipation Pd | 131W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS NaN | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series R6013VND3 NaN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.3Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Power Dissipation Pd 131W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS NaN | ||
Automotive Standard No | ||
The ROHM power MOSFET with a low on resistance and high power package which is suitable for switching circuits, single cell battery applications and mobile applications.
Fast reverse recovery time (trr)
Low on resistance
Fast switching speed
Drive circuits can be simple
Liens connexes
- ROHM R6013VND3 NaN Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6013VND3TL1
- ROHM R6007END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- ROHM R6004END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 10-Pin TO-252
- Infineon IPD50R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- ROHM R6004END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6004END3TL1
- ROHM R6007END3 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6007END3TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6010YND3TL1
