Infineon HEXFET Type N-Channel MOSFET, 280 A, 30 V, 8-Pin PQFN

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N° de stock RS:
258-3971
Référence fabricant:
IRFH8303TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

156W

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

58nC

Maximum Operating Temperature

150°C

Height

0.9mm

Length

6mm

Width

5 mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon StrongIRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Softer body-diode compared to previous silicon generation

Wide portfolio available

Increased power density

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