Infineon HEXFET Type N-Channel MOSFET, -5.1 A, -30 V, 6-Pin PQFN

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Actuellement indisponible
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N° de stock RS:
257-9391
Référence fabricant:
IRFHS9351TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

-5.1A

Maximum Drain Source Voltage Vds

-30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

290mΩ

Typical Gate Charge Qg @ Vgs

1.9nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.4W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Width

2 mm

Standards/Approvals

RoHS

Height

0.9mm

Length

2mm

Automotive Standard

No

The Infineon IRFHS series is the -30V dual p channel strong IRFET power mosfet in a PQFN 2x2 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard surface mount power package

Low RDS (on) in a small package

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