Infineon Dual OptiMOS Type N-Channel MOSFET, 20 A, 55 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 258-3876
- Référence fabricant:
- IPG20N06S2L35AATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 660,00 €
(TVA exclue)
3 220,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 5 000 unité(s) expédiée(s) à partir du 11 juin 2026
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,532 € | 2 660,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3876
- Référence fabricant:
- IPG20N06S2L35AATMA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Liens connexes
- Infineon Dual OptiMOS Type N-Channel MOSFET 55 V Enhancement, 8-Pin TDSON IPG20N06S2L35AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC123N08NS3GATMA1
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET & Diode 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35AATMA1
