Infineon Dual OptiMOS 2 Type N-Channel Power Transistor, 20 A, 55 V Enhancement, 8-Pin TDSON IPG20N06S2L65AATMA1
- N° de stock RS:
- 223-8520
- Référence fabricant:
- IPG20N06S2L65AATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 15 unités)*
13,68 €
(TVA exclue)
16,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 19 950 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 - 135 | 0,912 € | 13,68 € |
| 150 - 360 | 0,866 € | 12,99 € |
| 375 - 735 | 0,829 € | 12,44 € |
| 750 - 1485 | 0,795 € | 11,93 € |
| 1500 + | 0,739 € | 11,09 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 223-8520
- Référence fabricant:
- IPG20N06S2L65AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 43W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 5.9 mm | |
| Standards/Approvals | RoHS | |
| Length | 5.15mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 43W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 5.9 mm | ||
Standards/Approvals RoHS | ||
Length 5.15mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS series dual N-channel MOSFET has drain to source voltage of 55 V. It has benefits of larger source lead frame connection for wire bonding and bond wire is 200um for up to 20A current.
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package
Ultra low Rds
100% Avalanche tested
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