Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 258-0915
- Référence fabricant:
- IAUC120N04S6N010ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 950,00 €
(TVA exclue)
3 550,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 12 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,59 € | 2 950,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0915
- Référence fabricant:
- IAUC120N04S6N010ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | IAUC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series IAUC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products which enables the customer to find the best product fit in the their applications. All of this enables the best-in-class product FOM and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
N-channel - Enhancement mode - normal LevelAEC Q101 qualified
MSL1 up to 260°C peak reflow
Green Product (RoHS compliant)
100% Avalanche tested
Liens connexes
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC120N04S6N010ATMA1
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC120N04S6L009ATMA1
- Infineon N-Channel MOSFET 60 V PG-TDSON IAUC120N06S5N017ATMA1
- Infineon N-Channel MOSFET 60 V PG-TDSON IAUC120N06S5L032ATMA1
- Infineon N-Channel MOSFET 80 V PG-TDSON IPP034N08N5AKSA1
- Infineon N-Channel MOSFET 120 V PG-TDSON-8 BSC120N12LSGATMA1
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC100N04S6N022ATMA1
- Infineon N-Channel MOSFET 40 V PG-TDSON IAUC60N04S6L039ATMA1