Infineon IAUC Type N-Channel MOSFET, 120 A, 40 V Enhancement, 8-Pin TDSON IAUC120N04S6N013ATMA1
- N° de stock RS:
- 258-0918
- Référence fabricant:
- IAUC120N04S6N013ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,77 €
(TVA exclue)
3,352 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 4 938 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,385 € | 2,77 € |
| 20 - 48 | 1,15 € | 2,30 € |
| 50 - 98 | 1,075 € | 2,15 € |
| 100 - 198 | 1,01 € | 2,02 € |
| 200 + | 0,925 € | 1,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0918
- Référence fabricant:
- IAUC120N04S6N013ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IAUC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 115W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IAUC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 115W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS 6 40V power MOS technology in the 5x6mm² SS08 leadless package with highest quality level and robustness for automotive applications. A portfolio of 16 products which enables the customer to find the best product fit in the their applications. All of this enables the best-in-class product FOM and performance on the market. The new SS08 product offers 120A continuous current ratings, which is >25% higher than the standard DPAK at almost half of its footprint area.
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)
100% Avalanche tested
Liens connexes
- Infineon MOSFET PG-TDSON-8 IAUC120N04S6N013ATMA1
- Infineon MOSFET 650 V PG-TDSON-8 IPLK60R600PFD7ATMA1
- Infineon MOSFET 650 V PG-TDSON-8 IPLK60R360PFD7ATMA1
- Infineon N-Channel MOSFET 60 V PG-TDSON-8 BSC112N06LDATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC0503NSIATMA1
- Infineon N-Channel MOSFET 120 V PG-TDSON-8 BSC120N12LSGATMA1
- Infineon N-Channel MOSFET 30 V PG-TDSON-8 BSC050N03LSGATMA1
- Infineon N-Channel MOSFET 100 V PG-TDSON-8 IPB123N10N3GATMA1