Infineon HEXFET Type N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL
- N° de stock RS:
- 258-0633
- Référence fabricant:
- AUIRFR8403TRL
- Fabricant:
- Infineon
Sous-total (1 paquet de 2 unités)*
3,51 €
(TVA exclue)
4,248 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 812 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 1,755 € | 3,51 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-0633
- Référence fabricant:
- AUIRFR8403TRL
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Power Dissipation Pd | 99W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Power Dissipation Pd 99W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 IRLR3114ZTRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-252 IRFR7446TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 40 V, 3-Pin TO-252 IRFR4104TRPBF
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252