Références fabricant

Infineon HEXFET N-Channel MOSFET, 124 A, 100 V Enhancement DirectFET IRF7769L1TRPBF

N° de stock RS:: 257-9317
Référence fabricant:: IRF7769L1TRPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 124 A, 100 V Enhancement DirectFET IRF7769L1TRPBF

Sous-total (1 bobine de 4000 unités)*

9 796,00 €

(TVA exclue)

11 852,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 22 mars 2027

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Unité	Prix par unité	la bobine*
4000 +	2,449 €	9 796,00 €

*Prix donné à titre indicatif

N° de stock RS:: 257-9317
Référence fabricant:: IRF7769L1TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	124A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	DirectFET
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	3.50mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	+175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 124A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type DirectFET
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 3.50mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature +175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7769L1TRPBF

Infineon HEXFET Series MOSFET, 100V Maximum Drain-Source Voltage, 124A Maximum Continuous Drain Current - IRF7769L1TRPBF

This MOSFET is a through‑hole N‑channel enhancement device designed for high‑current switching in demanding electrical systems. It operates across a wide temperature range suitable for industrial conditions and meets RoHS environmental restrictions. The component is supplied in a DirectFET package intended for applications requiring efficient thermal management and Compact board integration.

Features and Benefits:

• 3.50mΩ RDS(on) reduces conduction losses for higher efficiency
• 100V VDS enables operation in medium‑voltage topologies
• 124A continuous drain current supports high‑power delivery
• VF 1.3V forward voltage assists accurate gate‑to‑source control
• -55°C to +175°C temperature range ensures extended thermal tolerance

Applications

• Suitable for power supply and motor control systems
• Used with high‑current DC power distribution racks
• Ideal for industrial converter and inverter stages
• Can be used for battery management and charge regulation

What package type is used for thermal handling?

It uses a DirectFET package to facilitate low thermal resistance and efficient heat transfer.

Which mounting method does it require?

The device is designed for through‑hole mounting to provide robust mechanical and thermal connection.

Is the device suited to automotive qualifications?

It is not specified as an automotive‑standard part and therefore should be evaluated against vehicle‑specific requirements.

What channel polarity and mode are implemented?

The part is an N‑channel device operating in enhancement mode, suitable for common high‑side or low‑side switches.

Does the component comply with environmental directives?

It is RoHS‑compliant, indicating restriction of certain hazardous substances.

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