Infineon HEXFET N-Channel MOSFET, 57 A, 100 V Enhancement SO-8 IRF6644TRPBF
- N° de stock RS:
- 257-9296
- Référence fabricant:
- IRF6644TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
6,43 €
(TVA exclue)
7,78 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 4 470 unité(s) expédiée(s) à partir du 31 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 3,215 € | 6,43 € |
| 20 - 48 | 2,83 € | 5,66 € |
| 50 - 98 | 2,665 € | 5,33 € |
| 100 - 198 | 2,48 € | 4,96 € |
| 200 + | 1,765 € | 3,53 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-9296
- Référence fabricant:
- IRF6644TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 100V Maximum Drain-Source Voltage, 57A Maximum Continuous Drain Current - IRF6644TRPBF
This MOSFET is an N-channel enhancement device designed for power switching and control in electronic systems. It operates over a wide temperature range and is supplied in a Compact SO-8 package for mounting on printed circuit assemblies. The device is suitable where high current handling and modest forward diode drop are required, and it meets RoHS environmental restrictions.
Features and Benefits:
• 100V voltage rating enables high-voltage switching capability
• 57A continuous current supports heavy-load applications
• 13mΩ Rds(on) reduces conduction losses during operation
• 89W power dissipation allows sustained thermal loading
• 28nC gate charge enables predictable gate-drive requirements
• 57A continuous current supports heavy-load applications
• 13mΩ Rds(on) reduces conduction losses during operation
• 89W power dissipation allows sustained thermal loading
• 28nC gate charge enables predictable gate-drive requirements
Applications
• Suitable for DC-DC converters in power supplies
• Ideal for synchronous rectification in switch-mode supplies
• Used with motor-drive stages requiring high current
• Can be used for high-side or low-side switching
• Suitable for intermediate-bus and power-management circuits
• Ideal for synchronous rectification in switch-mode supplies
• Used with motor-drive stages requiring high current
• Can be used for high-side or low-side switching
• Suitable for intermediate-bus and power-management circuits
What is the permissible ambient operating temperature range?
It functions across a minimum of -55°C up to a maximum of 150°C.
What gate voltage limits must be observed during drive?
The gate must not exceed ±20V relative to the source to prevent damage.
How does the intrinsic diode behave in forward conduction?
The built-in diode exhibits a forward voltage of 1.3V during conduction.
What packaging should be expected for board assembly?
It arrives in an SO-8 surface-mount package suitable for standard solder assembly.
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