Infineon HEXFET Type N-Channel MOSFET, 27 A, 150 V, 8-Pin PQFN IRFH5215TRPBF
- N° de stock RS:
- 257-5871
- Référence fabricant:
- IRFH5215TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
9,20 €
(TVA exclue)
11,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 4 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 1,84 € | 9,20 € |
| 50 - 120 | 1,582 € | 7,91 € |
| 125 - 245 | 1,492 € | 7,46 € |
| 250 - 495 | 1,38 € | 6,90 € |
| 500 + | 1,288 € | 6,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 257-5871
- Référence fabricant:
- IRFH5215TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5 mm | |
| Length | 6mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5 mm | ||
Length 6mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Low RDSon (< 58 m)
Low thermal resistance to PCB (<12°C/W)
100% Rg tested
Low profile (<09 mm)
Industry-standard pinout
Compatible with existing surface mount techniques
RoHS compliant containing no lead, no bromide and no halogen environmentally
MSL1, industrial qualification
Liens connexes
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