Infineon HEXFET Type N-Channel MOSFET, 44 A, 150 V Enhancement, 8-Pin PQFN IRFH5015TRPBF
- N° de stock RS:
- 130-0975
- Référence fabricant:
- IRFH5015TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
5,85 €
(TVA exclue)
7,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 370 unité(s) expédiée(s) à partir du 12 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,17 € | 5,85 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 130-0975
- Référence fabricant:
- IRFH5015TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Standards/Approvals | No | |
| Height | 0.85mm | |
| Width | 5 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Standards/Approvals No | ||
Height 0.85mm | ||
Width 5 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN IRFH8334TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 150 V, 8-Pin PQFN IRFH5215TRPBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PQFN
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PQFN