Infineon HEXFET Type P-Channel MOSFET, -21 A, -30 V, 8-Pin PQFN

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N° de stock RS:
257-5533
Référence fabricant:
IRFH9310TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-21A

Maximum Drain Source Voltage Vds

-30V

Package Type

PQFN

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.7mΩ

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

3.1W

Maximum Operating Temperature

150°C

Width

6 mm

Standards/Approvals

RoHS

Height

0.39mm

Length

5mm

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available

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