Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3
- N° de stock RS:
- 256-7347
- Référence fabricant:
- SI2329DS-T1-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
10,625 €
(TVA exclue)
12,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 1 725 unité(s) expédiée(s) à partir du 21 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 0,425 € | 10,63 € |
| 50 - 75 | 0,416 € | 10,40 € |
| 100 - 225 | 0,318 € | 7,95 € |
| 250 - 975 | 0,311 € | 7,78 € |
| 1000 + | 0,193 € | 4,83 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7347
- Référence fabricant:
- SI2329DS-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6A | |
| Maximum Drain Source Voltage Vds | -8V | |
| Series | Si2329DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Width | 1.4mm | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6A | ||
Maximum Drain Source Voltage Vds -8V | ||
Series Si2329DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Maximum Gate Source Voltage Vgs 5V | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Width 1.4mm | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
Vishay Si2329DS Series MOSFET, 2.5W Maximum Power Dissipation, 0.12Ω Maximum Drain Source Resistance - SI2329DS-T1-GE3
This p-channel MOSFET is a compact surface-mount transistor designed for switching and power-management roles in electronic assemblies. It operates across a wide temperature span and is suitable for applications requiring low on-resistance, moderate current handling and standard gate-drive levels within small SOT-23 packages.
Features and Benefits:
• Low on-resistance Rds(on) 0.12 Ω enables reduced conduction losses
• Rated continuous drain current 6A supports higher load currents
• Maximum power dissipation 2.5W allows sustained switching duty
• Gate charge Qg 19.3 nC facilitates relatively fast switching performance
• Gate-source voltage rating 5V permits standard logic-level gate drives
• Operating range -55 °C to 150 °C ensures wide temperature tolerance
• Rated continuous drain current 6A supports higher load currents
• Maximum power dissipation 2.5W allows sustained switching duty
• Gate charge Qg 19.3 nC facilitates relatively fast switching performance
• Gate-source voltage rating 5V permits standard logic-level gate drives
• Operating range -55 °C to 150 °C ensures wide temperature tolerance
Applications
• Suitable for battery-protection circuits in portable devices
• Ideal for power-management in compact consumer electronics
• Used with load-switching in automotive-adjacent non‑certified systems
• Can be used for high-side switching in DC power rails
• Suitable for surface-mount designs requiring SOT-23 footprint
• Ideal for power-management in compact consumer electronics
• Used with load-switching in automotive-adjacent non‑certified systems
• Can be used for high-side switching in DC power rails
• Suitable for surface-mount designs requiring SOT-23 footprint
What mounting method is required for assembly?
It is a surface-mount device in an SOT-23 package, intended for reflow soldering onto PCBs.
Which polarity and voltage does the device handle on the drain-source?
The device is a P‑channel type specified for a maximum drain-source voltage of -8V when used within ratings.
How does thermal performance affect layout considerations?
With a maximum dissipation of 2.5 W, PCB copper area and thermal vias should be provided to spread heat and maintain junction temperature under heavy load.
Are there limitations on gate-drive amplitudes?
The maximum gate-source differential is 5V, so gate drivers must not exceed this voltage to avoid damage.
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