Vishay IRFPG30 Type N-Channel Power MOSFET, 3.1 A, 1000 V, 3-Pin TO-247AC IRFPG30PBF
- N° de stock RS:
- 256-7301
- Référence fabricant:
- IRFPG30PBF
- Fabricant:
- Vishay
Sous-total (1 paquet de 2 unités)*
4,69 €
(TVA exclue)
5,674 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 + | 2,345 € | 4,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 256-7301
- Référence fabricant:
- IRFPG30PBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 1000V | |
| Series | IRFPG30 | |
| Package Type | TO-247AC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +150°C | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 1000V | ||
Series IRFPG30 | ||
Package Type TO-247AC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +150°C | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRFPG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFPG30PBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion duties in demanding environments. It operates across a broad temperature range and is supplied in a through-hole package for robust mounting and thermal handling, making it suitable for industrial and high-voltage applications where controlled switching and heat dissipation are required.
Features and Benefits:
• 1000V drain-source rating enables high-voltage switching capability
• 3.1A continuous current supports moderate load conduction
• 125W dissipation allows sustained power handling under load
• 5Ω maximum RDS(on) limits conduction losses at rated conditions
• 80nC typical gate charge offers predictable switching energy
• 20V gate tolerance protects against excessive gate drive
• 3.1A continuous current supports moderate load conduction
• 125W dissipation allows sustained power handling under load
• 5Ω maximum RDS(on) limits conduction losses at rated conditions
• 80nC typical gate charge offers predictable switching energy
• 20V gate tolerance protects against excessive gate drive
Applications
• Suitable for high-voltage power supplies and converters
• Used in industrial motor drive control stages
• Ideal for switching in induction heating systems
• Can be used for line-side surge or clamp circuits
• Used for educational and prototype through-hole power designs
• Used in industrial motor drive control stages
• Ideal for switching in induction heating systems
• Can be used for line-side surge or clamp circuits
• Used for educational and prototype through-hole power designs
What mounting method does it require for installation?
It is supplied in a TO-247AC through-hole package intended for bolted or soldered mounting to a PCB and heatsink interfaces for effective thermal coupling.
How does it behave across temperature extremes?
The device is rated to operate from -55°C up to +150°C, allowing use in environments with wide ambient and junction temperature variations.
What gate drive constraints should designers observe?
The gate must be driven within ±20V maximum to avoid exceeding gate-source voltage limits and to maintain reliable switching.
Are there any materials or environmental restrictions noted?
It complies with RoHS requirements, restricting certain hazardous substances in its construction.
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