Références fabricant

Vishay IRFPG30 Type N-Channel Power MOSFET, 3.1 A, 1000 V, 3-Pin TO-247AC IRFPG30PBF

N° de stock RS:: 256-7300
Référence fabricant:: IRFPG30PBF
Fabricant:: Vishay

Vishay IRFPG30 Type N-Channel Power MOSFET, 3.1 A, 1000 V, 3-Pin TO-247AC IRFPG30PBF

Offre groupée disponible

Consulter les options de prix de gros

Sous-total (1 tube de 25 unités)*

56,40 €

(TVA exclue)

68,25 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

400 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
25 - 75	2,256 €	56,40 €
100 - 475	1,954 €	48,85 €
500 - 975	1,591 €	39,78 €
1000 +	1,478 €	36,95 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7300
Référence fabricant:: IRFPG30PBF
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	1000V
	Series	IRFPG30
	Package Type	TO-247AC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5Ω
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	125W
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	5.21mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 1000V
	Series IRFPG30
	Package Type TO-247AC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5Ω
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 125W
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 5.21mm
	Automotive Standard No

Vishay IRFPG30 Series Power MOSFET, 1000V Maximum Drain Source Voltage, 125W Maximum Power Dissipation - IRFPG30PBF

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion duties in demanding environments. It operates across a broad temperature range and is supplied in a through-hole package for robust mounting and thermal handling, making it suitable for industrial and high-voltage applications where controlled switching and heat dissipation are required.

Features and Benefits:

• 1000V drain-source rating enables high-voltage switching capability
• 3.1A continuous current supports moderate load conduction
• 125W dissipation allows sustained power handling under load
• 5Ω maximum RDS(on) limits conduction losses at rated conditions
• 80nC typical gate charge offers predictable switching energy
• 20V gate tolerance protects against excessive gate drive

Applications

• Suitable for high-voltage power supplies and converters
• Used in industrial motor drive control stages
• Ideal for switching in induction heating systems
• Can be used for line-side surge or clamp circuits
• Used for educational and prototype through-hole power designs

What mounting method does it require for installation?

It is supplied in a TO-247AC through-hole package intended for bolted or soldered mounting to a PCB and heatsink interfaces for effective thermal coupling.

How does it behave across temperature extremes?

The device is rated to operate from -55°C up to +150°C, allowing use in environments with wide ambient and junction temperature variations.

What gate drive constraints should designers observe?

The gate must be driven within ±20V maximum to avoid exceeding gate-source voltage limits and to maintain reliable switching.

Are there any materials or environmental restrictions noted?

It complies with RoHS requirements, restricting certain hazardous substances in its construction.

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