onsemi NTB Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 7-Pin TO-263
- N° de stock RS:
- 254-7660
- Référence fabricant:
- NTBG022N120M3S
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 bobine de 800 unités)*
9 393,60 €
(TVA exclue)
11 366,40 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 - 800 | 11,742 € | 9 393,60 € |
| 1600 - 1600 | 11,507 € | 9 205,60 € |
| 2400 + | 11,272 € | 9 017,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 254-7660
- Référence fabricant:
- NTBG022N120M3S
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 148nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 148nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
The ON Semiconductor NTB series of planar sic mosfets is optimized for fast switching applications with a planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
100% avalanche tested
Improved power density
Gate drive voltage 15V to 18V
Liens connexes
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