Infineon IAUZ Type N-Channel MOSFET, 100 A, 1200 V Enhancement, 8-Pin AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- N° de stock RS:
- 250-0218
- Référence fabricant:
- F3L8MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
Sous-total (1 unité)*
134,95 €
(TVA exclue)
163,29 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 16 unité(s) expédiée(s) à partir du 29 décembre 2025
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 134,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0218
- Référence fabricant:
- F3L8MR12W2M1HPB11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IAUZ | |
| Package Type | AG-EASY2B | |
| Mount Type | Screw | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IAUZ | ||
Package Type AG-EASY2B | ||
Mount Type Screw | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFET EasyPACK™ 2B 1200 V / 8 mΩ 3-Level module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor, pre-applied thermal interface material and PressFIT Contact Technology.
High current density
Low switching losses
Rugged mounting due to integrated mounting clamps
Integrated NTC temperature sensor
PressFIT contact technology
Pre-applied thermal interface material
Liens connexes
- Infineon N-Channel MOSFET Module 1200 V AG-EASY2B F3L8MR12W2M1HPB11BPSA1
- Infineon F4 Quad SiC N-Channel MOSFET Module 1200 V AG-EASY2B F411MR12W2M1B76BOMA1
- Infineon F4 Quad SiC N-Channel MOSFET Module 1200 V AG-EASY2B F445MR12W1M1B76BPSA1
- Infineon CoolSiC Dual SiC N-Channel SiC Power Module 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- Infineon N-Channel MOSFET Module 1200 V AG-EASY1B FS55MR12W1M1HB11NPSA1
- Infineon N-Channel MOSFET Module 1200 V AG-EASY3B FF2MR12W3M1HB11BPSA1
- Infineon FP35R12W2T7B11BOMA1 IGBT, 35 A 1200 V AG-EASY2B
- Infineon FP50R12W2T7B11BOMA1 IGBT, 50 A 1200 V AG-EASY2B
