Infineon FP35R12W2T4BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V AG-EASY2B-1, Panel Mount

Voir l’ensemble des IGBTs

Sous-total (1 unité)*

61,91 €

(TVA exclue)

74,91 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • Plus 4 unité(s) expédiée(s) à partir du 05 janvier 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
1 +61,91 €

*Prix donné à titre indicatif

N° de stock RS:
111-6098
Référence fabricant:
FP35R12W2T4BOMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

215 W

Package Type

AG-EASY2B-1

Configuration

3 Phase Bridge

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

56.7 x 48 x 12mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Statut RoHS non applicable

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Liens connexes