Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 201-2810
- Référence fabricant:
- FF6MR12W2M1B11BOMA1
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | AG-EASY2B | |
| Series | CoolSiC | |
| Mounting Type | Screw Mount | |
| Maximum Drain Source Resistance | 0.00825 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.55V | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 2 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type AG-EASY2B | ||
Series CoolSiC | ||
Mounting Type Screw Mount | ||
Maximum Drain Source Resistance 0.00825 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.55V | ||
Transistor Material SiC | ||
Number of Elements per Chip 2 | ||
The Infineon 6 mO, 1200 V half bridge module with Silicon Carbide MOSFET, It has NTC temperature sensor and PressFIT contact technology. It is also available with thermal interface material.
High current density
Low inductive design
Low switching losses
RoHS-compliant modules
Low inductive design
Low switching losses
RoHS-compliant modules
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