Infineon Half Bridge OptiMOS-TM6 Type N-Channel Power MOSFET, 60 A, 40 V N, 8-Pin SuperSO8 5 x 6 IAUC60N04S6L030HATMA1
- N° de stock RS:
- 249-6889
- Référence fabricant:
- IAUC60N04S6L030HATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
2,28 €
(TVA exclue)
2,76 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 776 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,14 € | 2,28 € |
| 20 - 48 | 1,01 € | 2,02 € |
| 50 - 98 | 0,94 € | 1,88 € |
| 100 - 198 | 0,92 € | 1,84 € |
| 200 + | 0,905 € | 1,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6889
- Référence fabricant:
- IAUC60N04S6L030HATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | SuperSO8 5 x 6 | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 75W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type SuperSO8 5 x 6 | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 75W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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