Infineon Half Bridge IAUC45N04S6L063H Type N-Channel MOSFET, 45 A, 40 V Enhancement, 8-Pin SuperSO8 5 x 6
- N° de stock RS:
- 249-6883
- Référence fabricant:
- IAUC45N04S6L063HATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
1 725,00 €
(TVA exclue)
2 085,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,345 € | 1 725,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 249-6883
- Référence fabricant:
- IAUC45N04S6L063HATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | IAUC45N04S6L063H | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 41W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SuperSO8 5 x 6 | ||
Series IAUC45N04S6L063H | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 41W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
175°C operating temperature
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