Infineon OptiMOS-TM6 Type N-Channel MOSFET, 134 A, 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- N° de stock RS:
- 349-400
- Référence fabricant:
- IPB068N20NM6ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
8,29 €
(TVA exclue)
10,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 992 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 8,29 € |
| 10 - 99 | 7,45 € |
| 100 - 499 | 6,89 € |
| 500 - 999 | 6,38 € |
| 1000 + | 5,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-400
- Référence fabricant:
- IPB068N20NM6ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 134A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-TO263-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 134A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS-TM6 | ||
Package Type PG-TO263-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, DIN IEC 68-1: 55/175/56, IEC61249-2-21 | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
Infineon OptiMOS-TM6 Series MOSFET, 300W Maximum Power Dissipation, 200V Maximum Drain Source Voltage - IPB068N20NM6ATMA1
This n-channel enhancement MOSFET is a high-current switching device designed for power-management applications requiring low conduction losses and robust thermal performance. It operates as a surface-mounted transistor in a PG-TO263-3 package, suitable for circuits where compact, high-power switching is needed across a wide temperature range.
Features and Benefits:
• 200V drain-source rating enables high-voltage switching capability
• 6.8mΩ low Rds(on) reduces conduction losses at high currents
• 134A continuous drain current supports heavy-current applications
• 300W power dissipation allows sustained thermal loading
• 73nC typical gate charge provides faster gate transitions
• -55 to 175°C operating range endures harsh temperature environments
• 6.8mΩ low Rds(on) reduces conduction losses at high currents
• 134A continuous drain current supports heavy-current applications
• 300W power dissipation allows sustained thermal loading
• 73nC typical gate charge provides faster gate transitions
• -55 to 175°C operating range endures harsh temperature environments
Applications
• Suitable for synchronous rectification in power supplies
• Ideal for DC-DC converters in high-voltage rails
• Used with motor drivers requiring high continuous current
• Can be used for load switches in industrial power systems
• Suitable for high-temperature power-management modules
• Ideal for DC-DC converters in high-voltage rails
• Used with motor drivers requiring high continuous current
• Can be used for load switches in industrial power systems
• Suitable for high-temperature power-management modules
What mounting method is required for reliable thermal contact?
The device is designed for surface mounting
the PG-TO263-3 package permits soldered PCB attachment with a large thermal pad to aid heat transfer to the board and heatsinking arrangements.
How does the gate-drive requirement affect switching design?
The maximum gate-source voltage is 20V and the typical gate charge is 73nC, so gate-driver selection should provide sufficient current to achieve the desired switching speed while respecting Vgs limits.
What environmental conditions can it withstand?
It conforms to specified standards including RoHS and specified IEC temperature/humidity stress levels, and is rated to operate from -55°C up to 175°C for use in demanding thermal environments.
What electrical limits protect against over-stress?
The device’s maximum drain-source voltage is 200V and its continuous drain current rating is 134A
designs should include appropriate current limiting and transient protection to avoid exceeding these parameters.
Liens connexes
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R099CFD7AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R050CFD7AATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-3 IAUCN04S6N007TATMA1