Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1
- N° de stock RS:
- 349-278
- Référence fabricant:
- IAUCN04S6N017TATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
12,12 €
(TVA exclue)
14,665 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 1 995 unité(s) expédiée(s) à partir du 10 août 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,424 € | 12,12 € |
| 50 - 95 | 2,304 € | 11,52 € |
| 100 - 495 | 2,134 € | 10,67 € |
| 500 - 995 | 1,964 € | 9,82 € |
| 1000 + | 1,886 € | 9,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-278
- Référence fabricant:
- IAUCN04S6N017TATMA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PG-LHDSO-10-1 | |
| Series | OptiMOS-TM6 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PG-LHDSO-10-1 | ||
Series OptiMOS-TM6 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Infineon IAU Series MOSFET, 200A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IAUCN04S6N017TATMA1
Features & Benefits
Applications
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