Infineon OptiMOS-TM6 Type N-Channel MOSFET, 200 A, 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N017TATMA1
- N° de stock RS:
- 349-278
- Référence fabricant:
- IAUCN04S6N017TATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
12,12 €
(TVA exclue)
14,665 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 1 995 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 2,424 € | 12,12 € |
| 50 - 95 | 2,304 € | 11,52 € |
| 100 - 495 | 2,134 € | 10,67 € |
| 500 - 995 | 1,964 € | 9,82 € |
| 1000 + | 1,886 € | 9,43 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 349-278
- Référence fabricant:
- IAUCN04S6N017TATMA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS-TM6 | |
| Package Type | PG-LHDSO-10-1 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 130W | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS-TM6 | ||
Package Type PG-LHDSO-10-1 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 130W | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
Infineon IAU Series MOSFET, 200A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IAUCN04S6N017TATMA1
Features & Benefits
Applications
What type of electrical connections are available with this device?
How does this relay contribute to operational safety?
What is the importance of the environmental specifications for this product?
Can it handle multiple switching cycles without failure?
Liens connexes
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-2 IAUCN04S6N009TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-1 IAUCN04S6N013TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 10-Pin PG-LHDSO-10-3 IAUCN04S6N007TATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 200 V Enhancement, 3-Pin PG-TO263-3 IPB068N20NM6ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R037CM8XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 10-Pin PG-HDSOP-10 IPDD60R180CM8XTMA1
