Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

2 285,00 €

(TVA exclue)

2 765,00 €

(TVA incluse)

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  • Expédition à partir du 07 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,914 €2 285,00 €

*Prix donné à titre indicatif

N° de stock RS:
244-0943
Référence fabricant:
IPD65R225C7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

N

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon's CoolMOS C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

650V voltage

Revolutionary Best-in-Class RDS (on)/package

Reduced energy stored in output capacitance (Eoss)

Lower gate charge Qg

Space saving through use of smaller packages or reduction of parts

Improved safety margin and suitable for both SMPS and Solar Inverter applications

Lowest conduction losses/package

Low switching losses

Better light load efficiency

Increasing power density

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