Infineon IPD Type N-Channel MOSFET, 180 A, 40 V N, 3-Pin TO-252 IPD80R280P7ATMA1
- N° de stock RS:
- 244-0946
- Référence fabricant:
- IPD80R280P7ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
2,88 €
(TVA exclue)
3,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 2 443 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,88 € |
| 10 - 24 | 2,74 € |
| 25 - 49 | 2,62 € |
| 50 - 99 | 2,51 € |
| 100 + | 2,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 244-0946
- Référence fabricant:
- IPD80R280P7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in-class DPAK RDS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio
Liens connexes
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD65R225C7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V N, 3-Pin TO-252 IPD30N12S3L31ATMA1
- Infineon IPD Type P-Channel MOSFET 40 V N, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1
- Infineon IPD Type P-Channel MOSFET 40 V N, 3-Pin TO-252 IPD25DP06LMATMA1
