Infineon 2 Type P-Channel MOSFET, -3.4 A, -55 V, 8-Pin SOIC AUIRF7342QTR

Voir l’ensemble des MOSFETs
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
243-9285
Référence fabricant:
AUIRF7342QTR
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-3.4A

Maximum Drain Source Voltage Vds

-55V

Package Type

SOIC

Pin Count

8

Forward Voltage Vf

-55V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

2W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

The Infineon AUIRF7342QTR N-Channel Power MOSFET specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Low On-Resistance

Logic Level Gate Drive

Dual P Channel MOSFET

Dynamic dv/dt Rating

150°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free, RoHS Compliant

Liens connexes