Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC IRF7342TRPBF
- N° de stock RS:
- 826-8901
- Référence fabricant:
- IRF7342TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
9,48 €
(TVA exclue)
11,47 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 80 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 1 060 unité(s) expédiée(s) à partir du 12 juin 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,948 € | 9,48 € |
| 100 - 240 | 0,739 € | 7,39 € |
| 250 - 490 | 0,692 € | 6,92 € |
| 500 - 990 | 0,644 € | 6,44 € |
| 1000 + | 0,598 € | 5,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 826-8901
- Référence fabricant:
- IRF7342TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.
Features & Benefits
• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
Applications
• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
What are the thermal limits for operation?
It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does this component enhance circuit efficiency?
The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.
Can this MOSFET handle pulsed currents?
Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.
What type of packaging is it available in?
It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.
Is there a specific gate voltage for optimal performance?
The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.
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