Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC

N° de stock RS:: 124-8750
Référence fabricant:: IRF7342TRPBF
Fabricant:: Infineon

Infineon Isolated HEXFET 2 Type P-Channel MOSFET, 3.4 A, 55 V Enhancement, 8-Pin SOIC

Sous-total (1 bobine de 4000 unités)*

1 836,00 €

(TVA exclue)

2 220,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

Expédition à partir du 24 mars 2026

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Unité	Prix par unité	la bobine*
4000 +	0,459 €	1 836,00 €

*Prix donné à titre indicatif

N° de stock RS:: 124-8750
Référence fabricant:: IRF7342TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.4A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	170mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	26nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	1.5mm
	Width	4 mm
	Standards/Approvals	No
	Length	5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.4A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 170mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 26nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 1.5mm
	Width 4 mm
	Standards/Approvals No
	Length 5mm
	Number of Elements per Chip 2
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF

This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.

Features & Benefits

• Maximum continuous drain current of 3.4A

• Drain-source voltage tolerance of up to 55V

• Surface mount design allows for straightforward installations

• Low maximum drain-source resistance improves energy efficiency

• Gate threshold voltage of 1 V promotes dependable switching

Applications

• Power management circuits for improved energy utilisation

• Automation equipment requiring robust switching capabilities

• Suitable for motor control systems

• Used in power converters for electronics

• Common in battery management systems

What are the thermal limits for operation?

It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.

How does this component enhance circuit efficiency?

The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.

Can this MOSFET handle pulsed currents?

Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.

What type of packaging is it available in?

It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.

Is there a specific gate voltage for optimal performance?

The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.