Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC SIHG026N60EF-GE3
- N° de stock RS:
- 239-8628
- Référence fabricant:
- SIHG026N60EF-GE3
- Fabricant:
- Vishay
Sous-total (1 tube de 25 unités)*
165,35 €
(TVA exclue)
200,075 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 475 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 25 + | 6,614 € | 165,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8628
- Référence fabricant:
- SIHG026N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 521W | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 521W | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 95A Continuous Drain Current - SIHG026N60EF-GE3
This power MOSFET is a high-voltage N-channel device designed for demanding power conversion and switching tasks in commercial and automotive environments. It operates across an extended temperature range and is supplied in a TO-247AC package intended for surface mounting, making it suitable where robust thermal performance and compact mounting are required.
Features and Benefits:
• 650V drain-source withstand for high-voltage switching applications
• 95A continuous drain current for heavy load handling
• 0.023Ω Rds(on) to reduce conduction losses
• 521W power dissipation for sustained power delivery
• 63nC typical gate charge for predictable switching behaviour
• 30V gate-source rating to accommodate wide gate drive voltages
• 95A continuous drain current for heavy load handling
• 0.023Ω Rds(on) to reduce conduction losses
• 521W power dissipation for sustained power delivery
• 63nC typical gate charge for predictable switching behaviour
• 30V gate-source rating to accommodate wide gate drive voltages
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for automotive powertrain and auxiliary systems
• Used for industrial motor drives and inverters
• Can be used for server and telecoms power modules
• Suitable for battery management and EV charging stages
• Ideal for automotive powertrain and auxiliary systems
• Used for industrial motor drives and inverters
• Can be used for server and telecoms power modules
• Suitable for battery management and EV charging stages
What operating temperatures can it tolerate?
It functions reliably from -55°C up to +150°C, supporting extreme thermal environments.
How does the package affect thermal management?
The TO-247AC package offers a large thermal pad area compatible with heatsinks and PCB mounting for effective heat transfer.
What gate-drive considerations are required?
The device accepts gate-source voltages up to 30V, so gate drivers should be selected to remain within that limit while ensuring proper enhancement.
Is it suitable for automotive qualification?
It meets AEC-Q101 standards, indicating suitability for certain automotive electronic applications.
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