Vishay EF Type N-Channel Power MOSFET, 95 A, 650 V Depletion, 3-Pin TO-247AC
- N° de stock RS:
- 239-8628
- Référence fabricant:
- SIHG026N60EF-GE3
- Fabricant:
- Vishay
Sous-total (1 tube de 25 unités)*
165,35 €
(TVA exclue)
200,075 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 475 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 25 + | 6,614 € | 165,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8628
- Référence fabricant:
- SIHG026N60EF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247AC | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.023Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 521W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247AC | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.023Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 521W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 95A Maximum Continuous Drain Current - SIHG026N60EF-GE3
This power MOSFET is a high-voltage switching transistor designed for demanding power-electronics environments, particularly in automotive and industrial systems. It operates as an N-type depletion-channel device in a through-hole surface package suitable for engineers requiring robust thermal and electrical performance across a wide temperature range.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 95A continuous drain current supports heavy load handling • 0.023Ω Rds(on) reduces conduction losses under load • 521W power dissipation allows sustained thermal performance • 63nC typical gate charge offers predictable switching behaviour • 30V gate tolerance ensures compatibility with common drive voltages
Applications
• Suitable for traction inverter stages in vehicle powertrain electronics • Ideal for high-voltage power supplies and converters • Used for industrial motor drive switching assemblies • Can be used for high-current DC-DC conversion in automation systems
What mounting style does this device use and why does it matter?
It is supplied in a TO-247AC surface-mount package which facilitates secure heat-sinking and straightforward PCB or heatsink attachment for efficient thermal management.
How does the device perform across temperature extremes?
The transistor is rated to operate from -55 to +150°C, enabling use in harsh ambient conditions and high-temperature enclosures.
What gate drive considerations should be observed?
The maximum Vgs is 30V
designers should ensure gate drivers do not exceed this level to prevent gate overstress and ensure reliable switching.
What standard addresses its suitability for automotive use?
It meets the automotive AEC-Q101 standard, indicating it has been qualified for vehicle electronic applications under that specification.
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