Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3
- N° de stock RS:
- 239-8620
- Référence fabricant:
- SIHA15N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,72 €
(TVA exclue)
19,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 970 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,144 € | 15,72 € |
| 50 - 120 | 2,954 € | 14,77 € |
| 125 - 245 | 2,674 € | 13,37 € |
| 250 - 495 | 2,516 € | 12,58 € |
| 500 + | 2,36 € | 11,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8620
- Référence fabricant:
- SIHA15N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.35Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.35Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3
This power MOSFET is a high-voltage, N-channel semiconductor device designed for switching and power-management duties in demanding environments. It is supplied in a TO-220 package for surface mounting and is intended for applications that require robust high-voltage capability, controlled gate behaviour and operation across a wide temperature span.
Features and Benefits:
• 850V drain voltage enables high-voltage switching applications
• 6A continuous drain current supports medium-power loads
• 0.35Ω Rds(on) minimises conduction losses under load
• 33W power dissipation allows sustained thermal handling
• 54nC typical gate charge permits predictable gate-drive design
• ±30V gate rating protects against excessive gate stress
• 6A continuous drain current supports medium-power loads
• 0.35Ω Rds(on) minimises conduction losses under load
• 33W power dissipation allows sustained thermal handling
• 54nC typical gate charge permits predictable gate-drive design
• ±30V gate rating protects against excessive gate stress
Applications
• Suitable for industrial high-voltage power converters
• Ideal for automotive electronics meeting AEC‑Q101 needs
• Used with switch-mode power supplies and inverters
• Can be used for motor drive front-end switching
• Suitable for auxiliary power supplies in harsh environments
• Ideal for automotive electronics meeting AEC‑Q101 needs
• Used with switch-mode power supplies and inverters
• Can be used for motor drive front-end switching
• Suitable for auxiliary power supplies in harsh environments
What temperature range can it operate within reliably?
It is specified to function from -55°C up to +150°C for wide ambient and junction tolerance.
How is gate-drive design influenced by the device?
The typical gate charge of 54nC defines the gate energy requirement and informs driver current and switching-speed trade-offs.
What packaging and mounting considerations apply?
The TO-220 package is provided for surface mounting and offers convenient thermal connection options for heatsinking.
What polarity and channel behaviour should designers expect?
The device is an N-channel depletion-mode transistor, requiring appropriate biasing and control strategies in circuit designs.
Liens connexes
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