Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3
- N° de stock RS:
- 239-8620
- Référence fabricant:
- SIHA15N80AEF-GE3
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
15,72 €
(TVA exclue)
19,02 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 970 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,144 € | 15,72 € |
| 50 - 120 | 2,954 € | 14,77 € |
| 125 - 245 | 2,674 € | 13,37 € |
| 250 - 495 | 2,516 € | 12,58 € |
| 500 + | 2,36 € | 11,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-8620
- Référence fabricant:
- SIHA15N80AEF-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.35Ω | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.35Ω | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3
This power MOSFET is a high-voltage switching transistor intended for demanding electronic and automotive environments. It functions as an N-channel depletion device in a rugged TO-220 surface package, designed to handle elevated voltages and temperatures while interfacing with standard gate-drive levels.
Features and Benefits:
• 850V drain rating enables high-voltage switching applications • 6 A continuous drain current supports moderate load currents • 33W power dissipation allows sustained thermal handling • 0.35 Ω Rds(on) reduces conduction losses under load • 54 nC typical gate charge permits controlled switching dynamics • 30V maximum gate tolerance protects against gate overvoltage
Applications
• Suitable for high-voltage power supplies in industrial automation • Ideal for automotive subsystems requiring AEC‑Q101 compliance • Used for motor-control circuits needing robust switching devices • Can be used for DC-DC converters in electrical systems • Used with high-voltage inverter stages in electromechanical equipment
What temperature extremes can this device tolerate in operation?
It operates across a wide temperature span from -55 °C up to +150 °C, permitting use in harsh thermal environments.
How is the device mounted and integrated into assemblies?
It is supplied in a TO-220 surface-mount package with three pins for straightforward through-panel or heatsink-attached mounting.
What protection level is provided for environmental directives?
The component meets RoHS standards, indicating restricted hazardous substance compliance for materials.
How does the gate specification affect drive circuitry?
The gate accepts up to 30 V, so driver stages should be designed to remain within this limit to avoid gate stress.
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