Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3
- N° de stock RS:
- 239-5381
- Référence fabricant:
- SIHK075N60E-T1-GE3
- Fabricant:
- Vishay
Sous-total (1 unité)*
5,75 €
(TVA exclue)
6,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 + | 5,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 239-5381
- Référence fabricant:
- SIHK075N60E-T1-GE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.08Ω | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PowerPAK 10 x 12 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.08Ω | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Continuous Drain Current - SIHK075N60E-T1-GE3
This power MOSFET is a high-voltage, N‑channel semiconductor device designed for switching and power conversion in demanding electronic systems. It is suited to surface-mount applications where compact packaging and robust thermal performance are required, and complies with RoHS environmental restrictions.
Features and Benefits:
• 600V rating enables high-voltage switching capability
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin
• 29A continuous drain current supports substantial load currents
• 0.08Ω Rds(on) delivers low conduction losses
• 167W power dissipation allows effective thermal handling
• 41nC typical gate charge permits controlled switching dynamics
• 30V gate tolerance provides broad gate-drive margin
Applications
• Suitable for industrial motor-drive inverters
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches
• Used with power supplies for server and telecoms equipment
• Ideal for DC-DC converters in renewable energy systems
• Can be used for high-voltage switch controllers in instrumentation
• Suitable for LED lighting drivers requiring high-voltage switches
What mounting method is required for reliable electrical connection?
It is supplied in a low-profile PowerPAK 10x12 package intended for surface mounting to a PCB using solder pads for mechanical and thermal contact.
How wide is the operating temperature range for harsh environments?
The device is rated to operate from -55°C up to 150°C, allowing use across extreme ambient and elevated junction conditions.
What gate-drive considerations should be observed?
The maximum gate-source voltage is 30V, so gate-drive circuits must limit Vgs within this boundary and provide sufficient drive to achieve the specified gate charge of around 41nC.
How does the package support thermal dissipation?
The PowerPAK 10x12 format offers a thermal path through the package to the PCB, aiding the device in managing up to 167W of dissipation under appropriate board thermal design.
Liens connexes
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