Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3

N° de stock RS:: 239-5381
Référence fabricant:: SIHK075N60E-T1-GE3
Fabricant:: Vishay

Vishay E Type N-Channel Power MOSFET, 29 A, 600 V, 8-Pin PowerPAK 10 x 12 SIHK075N60E-T1-GE3

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5,75 €

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6,96 €

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Unité	Prix par unité
1 +	5,75 €

*Prix donné à titre indicatif

N° de stock RS:: 239-5381
Référence fabricant:: SIHK075N60E-T1-GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK 10 x 12
	Series	E
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.08Ω
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	41nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	167W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK 10 x 12
	Series E
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.08Ω
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 41nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 167W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK075N60E-T1-GE3

Vishay Series E Power MOSFET, 600V Drain Source Voltage, 29A Maximum Continuous Drain Current - SIHK075N60E-T1-GE3

This power MOSFET is a high-voltage switching transistor designed for demanding electronic and electrical systems. It operates as an N-channel device suitable for surface-mount implementations, offering high-temperature endurance and substantial continuous current capability for power conversion and switching tasks in industrial environments.

Features and Benefits:

• 600V rating enables high-voltage switching applications • 29A continuous current supports heavy-load operation • 0.08Ω low Rds(on) reduces conduction losses • 167W power dissipation allows sustained thermal load handling • 41nC typical gate charge facilitates Faster switching transitions • 150°C maximum operating temperature permits elevated-temperature use

Applications

• Suitable for inverter stages in industrial drives • Ideal for switch-mode power supplies in automation systems • Used for high-voltage motor control circuits • Can be used for power conversion in renewable-energy inverters • Suitable for solid-state switching in electrical distribution equipment

What gate-drive considerations should I account for in designs?

Drive circuitry must handle a maximum gate-to-source voltage of 30V and be able to source/sink current to charge the typical 41nC gate quickly for efficient switching.

How should thermal management be approached for prolonged operation?

Ensure adequate PCB thermal layout and heat-sinking to dissipate up to 167W, and consider the device’s 150°C maximum junction rating when specifying cooling.

What are the electrical limits for safe operation at low temperatures?

The device is specified for use down to -55°C, so components and soldering processes must accommodate this minimum ambient without exceeding electrical stress limits.

Which package characteristics affect PCB assembly and layout?

The component uses an 8-pin PowerPAK 10x12 surface-mount package, requiring appropriate land pattern and solder paste deposition for reliable mounting and thermal transfer.

Is this suitable for automotive-grade replacements?

It is not specified to meet automotive standardisation, so suitability should be verified against vehicle-specific qualification requirements.