Infineon CoolMOS Type N-Channel MOSFET, 106 A, 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- N° de stock RS:
- 236-3681
- Référence fabricant:
- IPZA65R018CFD7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
17,29 €
(TVA exclue)
20,92 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 70 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 17,29 € |
| 5 - 9 | 16,43 € |
| 10 - 24 | 15,74 € |
| 25 - 49 | 15,04 € |
| 50 + | 14,01 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-3681
- Référence fabricant:
- IPZA65R018CFD7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 21.1mm | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 21.1mm | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 106 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Liens connexes
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- Infineon CoolMOS™ C7 N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZ65R045C7XKSA1
- Infineon CoolMOS™ Silicon N-Channel MOSFET 700 V, 4-Pin TO-247-4 IPZ65R065C7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 650 V, 3-Pin TO-247 IPW65R018CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R090CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R155CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R110CFD7XKSA1
- Infineon CoolMOS™ N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1