Infineon CoolMOS Type N-Channel MOSFET, 106 A, 700 V, 4-Pin TO-247-4 IPZA65R018CFD7XKSA1
- N° de stock RS:
- 236-3681
- Référence fabricant:
- IPZA65R018CFD7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
14,77 €
(TVA exclue)
17,87 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 70 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 14,77 € |
| 5 - 9 | 14,03 € |
| 10 - 24 | 13,44 € |
| 25 - 49 | 12,85 € |
| 50 + | 11,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 236-3681
- Référence fabricant:
- IPZA65R018CFD7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 106A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 446W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Height | 21.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 106A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 446W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Height 21.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 106 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Liens connexes
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- Infineon CoolMOS Type N-Channel MOSFET 700 V, 3-Pin TO-247 IPW65R090CFD7XKSA1