Références fabricant

Infineon IPT N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

N° de stock RS:: 236-1586
Référence fabricant:: IPT013N08NM5LFATMA1
Fabricant:: Infineon

Infineon IPT N-Channel MOSFET, 333 A, 80 V, 8-Pin HSOF-8 IPT013N08NM5LFATMA1

Sous-total (1 bobine de 2000 unités)*

9 328,00 €

(TVA exclue)

11 286,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 janvier 2027

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Unité	Prix par unité	la bobine*
2000 +	4,664 €	9 328,00 €

*Prix donné à titre indicatif

N° de stock RS:: 236-1586
Référence fabricant:: IPT013N08NM5LFATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	333A
	Maximum Drain Source Voltage Vds	80V
	Series	IPT
	Package Type	HSOF-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.3mΩ
	Maximum Power Dissipation Pd	278W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	158nC
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Width	10.58mm
	Length	10.1mm
	Standards/Approvals	No
	Height	2.4mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 333A
	Maximum Drain Source Voltage Vds 80V
	Series IPT
	Package Type HSOF-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.3mΩ
	Maximum Power Dissipation Pd 278W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 158nC
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Width 10.58mm
	Length 10.1mm
	Standards/Approvals No
	Height 2.4mm
	Automotive Standard No

Datasheet - IPT013N08NM5LFATMA1

Infineon IPT Series MOSFET, 80V Maximum Drain Source Voltage, 333A Maximum Continuous Drain Current - IPT013N08NM5LFATMA1

This MOSFET is a high-current N-channel transistor designed for surface-mount power switching in demanding thermal environments. It operates across a wide ambient range and delivers substantial continuous drain current and voltage capability for industrial and power-conversion applications.

Features and Benefits:

• 333A continuous drain current for heavy load handling
• 80V drain-to-source rating for mid-voltage systems
• 1.3mΩ low Rds(on) to reduce conduction losses
• 278W maximum power dissipation for thermal headroom
• 158nC typical gate charge for predictable switching behaviour

Applications

• Suitable for high-current DC-DC converters
• Ideal for motor drives and traction inverters
• Used with power distribution modules in servers
• Can be used for high-power battery management systems

What gate voltage range is permissible for driving this device?

The gate can be driven up to 20V relative to source without exceeding the specified limit.

What package and mounting style does it use for assembly?

It is supplied in an HSOF-8 package configured for surface mounting on printed-circuit assemblies.

How does the device perform in low-temperature conditions?

It is rated to operate down to -55°C, allowing use in cold-climate installations.

What are the physical envelope measurements relevant for PCB footprint planning?

The component measures 10.1mm by 10.58mm with a height of 2.4mm.

Is this device specified to meet automotive-grade standards?

It is not classified as an automotive-grade component.

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