Infineon IPT Type N-Channel MOSFET, 169 A, 80 V Enhancement, 8-Pin PG-HSOF-8
- N° de stock RS:
- 273-2794
- Référence fabricant:
- IPT029N08N5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
8,57 €
(TVA exclue)
10,37 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 82 unité(s) expédiée(s) à partir du 12 janvier 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 4,285 € | 8,57 € |
| 50 - 98 | 3,895 € | 7,79 € |
| 100 - 248 | 3,565 € | 7,13 € |
| 250 - 998 | 3,30 € | 6,60 € |
| 1000 + | 3,065 € | 6,13 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-2794
- Référence fabricant:
- IPT029N08N5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 169A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | IPT | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 167W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC1, IEC61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 169A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series IPT | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 167W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC1, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel 80 V MOSFET and ideal for high frequency switching and synchronized rectification. It is qualified according to JEDEC for target applications. This MOSFET is fully qualified according to JEDEC for industrial applications and halogen free according to IEC61249 2 21.
RoHS compliant
Pb free lead plating
Excellent gate charge
Very low on resistance
100 percent avalanche tested
Liens connexes
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