Infineon IPD Type P-Channel MOSFET, 13.9 A, 100 V Enhancement, 3-Pin TO-252 IPD18DP10LMATMA1

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Sous-total (1 bobine de 2500 unités)*

997,50 €

(TVA exclue)

1 207,50 €

(TVA incluse)

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Prix par unité
la bobine*
2500 +0,399 €997,50 €

*Prix donné à titre indicatif

N° de stock RS:
235-4854
Référence fabricant:
IPD18DP10LMATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13.9A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

178mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

-42nC

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

2.41mm

Width

6.22 mm

Length

6.73mm

Automotive Standard

No

The Infineon OptiMOS™ P-Channel MOSFETs 100V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy Interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. It is used in Battery management, Industrial automation.

Available in 4 different packages

Wide range

Normal level and logic level availability

Ideal for high and low switching frequency

Easy Interface to MCU

Low design complexity

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