ROHM N-Channel MOSFET, 11 A, 650 V, 3-Pin DPAK R6511END3TL1

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Informations sur le stock actuellement non accessibles
N° de stock RS:
235-2693
Référence fabricant:
R6511END3TL1
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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