ROHM Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511KND3TL1

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N° de stock RS:
235-2695
Référence fabricant:
R6511KND3TL1
Fabricant:
ROHM
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Marque

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

32nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

10.4mm

Length

6.4mm

Width

2.4 mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Low on-resistance

Ultra fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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