Références fabricant

Infineon iPB Type P-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB180P04P4L02ATMA2

N° de stock RS:: 229-1820
Référence fabricant:: IPB180P04P4L02ATMA2
Fabricant:: Infineon

Infineon iPB Type P-Channel MOSFET, 180 A, 40 V Enhancement, 7-Pin TO-263 IPB180P04P4L02ATMA2

Sous-total (1 bobine de 1000 unités)*

1 452,00 €

(TVA exclue)

1 757,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 04 janvier 2027

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Unité	Prix par unité	la bobine*
1000 +	1,452 €	1 452,00 €

*Prix donné à titre indicatif

N° de stock RS:: 229-1820
Référence fabricant:: IPB180P04P4L02ATMA2
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	40V
	Series	iPB
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	2.4mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.3V
	Maximum Gate Source Voltage Vgs	16V
	Maximum Power Dissipation Pd	150W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	+175°C
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 40V
	Series iPB
	Package Type TO-263
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 2.4mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.3V
	Maximum Gate Source Voltage Vgs 16V
	Maximum Power Dissipation Pd 150W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature +175°C
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB180P04P4L02ATMA2

Infineon iPB Series MOSFET, 150W Maximum Power Dissipation, 40V Maximum Drain Source Voltage - IPB180P04P4L02ATMA2

This MOSFET is a P-channel enhancement-mode power transistor designed for high-current switching in surface-mounted assemblies. It operates across a wide ambient temperature range and meets automotive stress qualifications for use in demanding electrical systems. The component is packaged for thermal and assembly efficiency and tolerates gate drive voltages suitable for power-control topologies.

Features and Benefits:

• Low on-resistance 2.4mΩ reduces conduction losses
• High continuous current 180A enables heavy-load switching
• 40V drain-source rating suits moderate-voltage systems
• 150W power dissipation supports sustained power handling
• Gate tolerance 16V allows robust control-voltage margins
• Temperature rating −55°C to +175°C sustains extreme environments

Applications

• Suitable for automotive power distribution units
• Ideal for high-current DC-DC converter stages
• Used for motor driver high-side switching
• Can be used for battery management protection circuits
• Suitable for surface-mount power modules in vehicles

What mounting style does it require for PCB assembly?

It is supplied in a TO-263 package intended for surface mounting.

How does it perform under continuous high current?

It supports continuous drain currents up to 180A with a maximum power dissipation of 150W.

What gate voltage range should be observed during operation?

Gate-source voltage should not exceed 16V to prevent device stress.

Is it suitable for use across wide temperature extremes?

The device is rated for operation from −55°C up to +175°C for high-temperature applications.

What type of channel and conduction mode does it use?

It employs a P-type channel operating in enhancement mode.

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