Infineon IPT010N08NM5 Type N-Channel MOSFET, 43 A, 80 V, 8-Pin HSOF
- N° de stock RS:
- 225-0581
- Référence fabricant:
- IPT010N08NM5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 2000 unités)*
7 480,00 €
(TVA exclue)
9 060,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 27 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 + | 3,74 € | 7 480,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-0581
- Référence fabricant:
- IPT010N08NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 43A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IPT010N08NM5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.05mΩ | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 178nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Width | 10.58 mm | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 43A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IPT010N08NM5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.05mΩ | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 178nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Width 10.58 mm | ||
Height 2.4mm | ||
Automotive Standard No | ||
The Infineon IPT010N08NM5 is the single N-channel OptiMOS 5 power MOSFET 80V 1.05mΩ 425A in a TOLL package. The OptiMOS 5 silicon technology is new generation of power MOSFETs and is specially designed for synchronous rectification for telecom and server power supplies.
Increased power density
Low voltage overshoot
Less paralleling required
Highest system efficiency
Reduced switching and conduction losses
Liens connexes
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