Infineon IAUT N-Channel MOSFET, 300 A, 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2

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Sous-total (1 bobine de 2000 unités)*

4 610,00 €

(TVA exclue)

5 578,00 €

(TVA incluse)

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  • Expédition à partir du 22 février 2027
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Unité
Prix par unité
la bobine*
2000 +2,305 €4 610,00 €

*Prix donné à titre indicatif

N° de stock RS:
229-1809
Référence fabricant:
IAUT300N08S5N012ATMA2
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

80V

Series

IAUT

Package Type

HSOF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

+175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon IAUT Series MOSFET, 80V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N08S5N012ATMA2


This MOSFET is a high-current N-channel enhancement device designed for demanding automotive and industrial power-switching roles. It operates across a wide ambient range and is supplied in a surface-mount HSOF package suited to heavy-current board layouts. The device is specified to withstand typical automotive gate excursions and delivers the voltage and current capacity needed for robust power conversion and motor-drive applications.

Features and Benefits:


• Low on-resistance of 1.2 mΩ reduces conduction losses and heat
• 80 V drain rating enables high-voltage switching applications
• 300 A continuous drain current supports high-current loads
• 375 W maximum dissipation allows sustained power handling
• ±20 V gate tolerance accommodates automotive gate-drive signals
• AEC-Q101 qualification meets automotive stress-screening requirements

Applications


• Suitable for traction inverter stages in electrified vehicles
• Ideal for high-current DC-DC converter outputs
• Used with motor-drive inverters and traction controllers
• Can be used for power distribution in automotive systems
• Suitable for industrial power modules requiring surface-mount assembly

What temperature extremes can this device tolerate?


It is rated to operate from -55 °C up to +175 °C.

What package type and mounting technology are used?


The device is supplied in an HSOF package and intended for surface-mounting.

How does the device handle gate stresses in automotive systems?


It accepts gate-source voltages up to ±20 V, allowing for typical automotive drive margins.

What channel conduction mode and type does it employ?


It is an enhancement-mode N-channel device designed for switching applications.

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