Infineon IAUT N-Channel MOSFET, 300 A, 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2
- N° de stock RS:
- 229-1811
- Référence fabricant:
- IAUT300N08S5N012ATMA2
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
10,87 €
(TVA exclue)
13,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 270 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,435 € | 10,87 € |
| 20 - 48 | 4,89 € | 9,78 € |
| 50 - 98 | 4,565 € | 9,13 € |
| 100 - 198 | 4,24 € | 8,48 € |
| 200 + | 3,965 € | 7,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 229-1811
- Référence fabricant:
- IAUT300N08S5N012ATMA2
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOF | |
| Series | IAUT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOF | ||
Series IAUT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon IAUT Series MOSFET, 80V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IAUT300N08S5N012ATMA2
This MOSFET is a high-current N-channel enhancement device designed for demanding automotive and industrial power-switching roles. It operates across a wide ambient range and is supplied in a surface-mount HSOF package suited to heavy-current board layouts. The device is specified to withstand typical automotive gate excursions and delivers the voltage and current capacity needed for robust power conversion and motor-drive applications.
Features and Benefits:
• Low on-resistance of 1.2 mΩ reduces conduction losses and heat
• 80 V drain rating enables high-voltage switching applications
• 300 A continuous drain current supports high-current loads
• 375 W maximum dissipation allows sustained power handling
• ±20 V gate tolerance accommodates automotive gate-drive signals
• AEC-Q101 qualification meets automotive stress-screening requirements
• 80 V drain rating enables high-voltage switching applications
• 300 A continuous drain current supports high-current loads
• 375 W maximum dissipation allows sustained power handling
• ±20 V gate tolerance accommodates automotive gate-drive signals
• AEC-Q101 qualification meets automotive stress-screening requirements
Applications
• Suitable for traction inverter stages in electrified vehicles
• Ideal for high-current DC-DC converter outputs
• Used with motor-drive inverters and traction controllers
• Can be used for power distribution in automotive systems
• Suitable for industrial power modules requiring surface-mount assembly
• Ideal for high-current DC-DC converter outputs
• Used with motor-drive inverters and traction controllers
• Can be used for power distribution in automotive systems
• Suitable for industrial power modules requiring surface-mount assembly
What temperature extremes can this device tolerate?
It is rated to operate from -55 °C up to +175 °C.
What package type and mounting technology are used?
The device is supplied in an HSOF package and intended for surface-mounting.
How does the device handle gate stresses in automotive systems?
It accepts gate-source voltages up to ±20 V, allowing for typical automotive drive margins.
What channel conduction mode and type does it employ?
It is an enhancement-mode N-channel device designed for switching applications.
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