Infineon OptiMOS Type N-Channel MOSFET, 46 A, 60 V Enhancement, 8-Pin TDSON

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Sous-total (1 bobine de 5000 unités)*

1 695,00 €

(TVA exclue)

2 050,00 €

(TVA incluse)

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Unité
Prix par unité
la bobine*
5000 +0,339 €1 695,00 €

*Prix donné à titre indicatif

N° de stock RS:
166-1198
Référence fabricant:
BSC097N06NSATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

46A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

36W

Maximum Operating Temperature

150°C

Width

6.1 mm

Height

1.1mm

Standards/Approvals

No

Length

5.35mm

Automotive Standard

No

Statut RoHS non applicable

Pays d'origine :
MY

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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