Infineon IPS70R Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-251 IPS70R900P7SAKMA1
- N° de stock RS:
- 222-4936
- Référence fabricant:
- IPS70R900P7SAKMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 25 unités)*
11,65 €
(TVA exclue)
14,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 675 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,466 € | 11,65 € |
| 125 - 225 | 0,364 € | 9,10 € |
| 250 - 600 | 0,34 € | 8,50 € |
| 625 - 1225 | 0,317 € | 7,93 € |
| 1250 + | 0,294 € | 7,35 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4936
- Référence fabricant:
- IPS70R900P7SAKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | IPS70R | |
| Package Type | TO-251 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30.5W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series IPS70R | ||
Package Type TO-251 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30.5W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Automotive Standard No | ||
The Infineon developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio
Liens connexes
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