Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR
- N° de stock RS:
- 222-4608
- Référence fabricant:
- AUIRF7103QTR
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
15,29 €
(TVA exclue)
18,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 270 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,529 € | 15,29 € |
| 100 - 240 | 1,452 € | 14,52 € |
| 250 - 490 | 1,391 € | 13,91 € |
| 500 - 990 | 1,331 € | 13,31 € |
| 1000 + | 1,238 € | 12,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4608
- Référence fabricant:
- AUIRF7103QTR
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 50V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Liens connexes
- Infineon HEXFET Silicon N-Channel MOSFET 50 V, 8-Pin SO-8 AUIRF7103QTR
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7413ZTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7465TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7451TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 IRF7473TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V SO-8 IRF7328TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V SO-8 IRF7404TRPBF
- Infineon HEXFET N-Channel MOSFET 12 V SO-8 IRF7329TRPBF