Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8 AUIRF7103QTR
- N° de stock RS:
- 222-4608
- Référence fabricant:
- AUIRF7103QTR
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
15,29 €
(TVA exclue)
18,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 270 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,529 € | 15,29 € |
| 100 - 240 | 1,452 € | 14,52 € |
| 250 - 490 | 1,391 € | 13,91 € |
| 500 - 990 | 1,331 € | 13,31 € |
| 1000 + | 1,238 € | 12,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4608
- Référence fabricant:
- AUIRF7103QTR
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
Liens connexes
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 50 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8 IRF8734TRPBF
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 55 V Enhancement, 8-Pin SO-8 AUIRF7341QTR