Infineon Dual N Channel Mosfet HEXFET 2 Type N-Channel MOSFET, 5.1 A, 55 V Enhancement, 8-Pin SO-8
- N° de stock RS:
- 217-2601
- Référence fabricant:
- IRF7341GTRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
2 708,00 €
(TVA exclue)
3 276,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 4 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,677 € | 2 708,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2601
- Référence fabricant:
- IRF7341GTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.1A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 2.4W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual N Channel Mosfet | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.1A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 2.4W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual N Channel Mosfet | ||
Maximum Operating Temperature 175°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Liens connexes
- Infineon HEXFET Dual N-Channel MOSFET 55 V, 8-Pin SO-8 IRF7341GTRPBF
- Infineon HEXFET Dual N-Channel MOSFET 55 V, 8-Pin SO-8 AUIRF7341QTR
- Infineon HEXFET Dual Silicon N-Channel MOSFET 55 V, 4-Pin SOT-223 IRFL024ZTRPBF
- Infineon HEXFET Dual N-Channel MOSFET 30 V, 8-Pin SO-8 IRF9956TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 30 V, 8-Pin SO-8 IRF7413ZTRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7465TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 150 V, 8-Pin SO-8 IRF7451TRPBF
- Infineon HEXFET Dual Silicon N-Channel MOSFET 100 V, 8-Pin SO-8 IRF7473TRPBF