Infineon Dual HEXFET 1 Type N-Channel MOSFET, 6.6 A, 20 V Enhancement, 8-Pin SO-8 IRF7311TRPBF
- N° de stock RS:
- 215-2583
- Numéro d'article Distrelec:
- 304-39-415
- Référence fabricant:
- IRF7311TRPBF
- Fabricant:
- Infineon
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 215-2583
- Numéro d'article Distrelec:
- 304-39-415
- Référence fabricant:
- IRF7311TRPBF
- Fabricant:
- Infineon
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 2W | |
| Forward Voltage Vf | 0.72V | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 2W | ||
Forward Voltage Vf 0.72V | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized lead frame for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With this improvement multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapour phase, infrared for Wave soldering techniques.
Generation V technology
Ultra low on resistance
Surface mount
Fully avalanche rated
Dual N-channel MOSFET
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