Infineon Dual HEXFET 1 Type N-Channel MOSFET, 3 A, 50 V Enhancement, 8-Pin SO-8

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N° de stock RS:
222-4607
Référence fabricant:
AUIRF7103QTR
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

50V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

5mm

Height

1.5mm

Width

4 mm

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Advanced Planar Technology

Dual N Channel MOSFET Low On-Resistance

Logic Level Gate Drive

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